IXFH60N65X2 IXYS SEMICONDUCTOR
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXFH60N65X2 - Leistungs-MOSFET, Klasse X2, n-Kanal, 650 V, 60 A, 0.052 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 60
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 780
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: HiPerFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.052
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: No SVHC (12-Jan-2017)
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Technische Details IXFH60N65X2 IXYS SEMICONDUCTOR
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V.
Weitere Produktangebote IXFH60N65X2 nach Preis ab 13.59 EUR bis 28.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFH60N65X2 | IXYS |
MOSFETs MOSFET 650V/60A Ultra Junction X2 |
auf Bestellung 739 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH60N65X2 | IXYS |
Description: MOSFET N-CH 650V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V |
auf Bestellung 5069 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFH60N65X2 |
|
Hersteller: IXYS
MOSFETs MOSFET 650V/60A Ultra Junction X2
MOSFETs MOSFET 650V/60A Ultra Junction X2
auf Bestellung 739 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.75 EUR |
| 10+ | 16.95 EUR |
| 120+ | 16.12 EUR |
| IXFH60N65X2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
auf Bestellung 5069 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.3 EUR |
| 30+ | 17.27 EUR |
| 120+ | 14.85 EUR |
| 510+ | 13.59 EUR |