IXFH70N30Q3 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
| Anzahl | Preis |
|---|---|
| 5+ | 15.27 EUR |
| 10+ | 13.38 EUR |
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Technische Details IXFH70N30Q3 IXYS
Description: MOSFET N-CH 300V 70A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V.
Weitere Produktangebote IXFH70N30Q3
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IXFH70N30Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 70A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFH70N30Q3 | Hersteller : IXYS |
MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A |
Produkt ist nicht verfügbar |