| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.26 EUR |
| 10+ | 23.18 EUR |
| 30+ | 22.22 EUR |
| 120+ | 19.59 EUR |
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Technische Details IXFJ20N85X IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W, Mounting: THT, Pulsed drain current: 50A, Power dissipation: 110W, Gate charge: 63nC, Polarisation: unipolar, Technology: HiPerFET™; X-Class, Features of semiconductor devices: ultra junction x-class, Drain current: 9.5A, Kind of channel: enhancement, Drain-source voltage: 850V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, Case: ISO247™, On-state resistance: 0.36Ω, Reverse recovery time: 190ns.
Weitere Produktangebote IXFJ20N85X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFJ20N85X | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W Mounting: THT Pulsed drain current: 50A Power dissipation: 110W Gate charge: 63nC Polarisation: unipolar Technology: HiPerFET™; X-Class Features of semiconductor devices: ultra junction x-class Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: ISO247™ On-state resistance: 0.36Ω Reverse recovery time: 190ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFJ20N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)