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IXFK100N65X2

IXFK100N65X2 IXYS


IXFK(X)100N65X2.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
auf Bestellung 3 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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Technische Details IXFK100N65X2 IXYS

Description: MOSFET N-CH 650V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-264, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.

Weitere Produktangebote IXFK100N65X2 nach Preis ab 19.92 EUR bis 35.39 EUR

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IXFK100N65X2 IXFK100N65X2 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXF_100N65X2_Datasheet.PDF MOSFETs MOSFET 650V/100A Ultra Junction X2
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.01 EUR
10+23.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK100N65X2 IXFK100N65X2 Hersteller : IXYS littelfuse-discrete-mosfets-ixf-100n65x2-datasheet?assetguid=bd7dffc9-72d4-4ee4-8bc2-7b72f9da7072 Description: MOSFET N-CH 650V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.39 EUR
25+22.89 EUR
100+19.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH