IXFK102N30P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Drain current: 102A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 19.99 EUR |
| 5+ | 14.3 EUR |
| 25+ | 13.66 EUR |
| 100+ | 13.38 EUR |
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Technische Details IXFK102N30P IXYS
Description: MOSFET N-CH 300V 102A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IXFK102N30P nach Preis ab 14.3 EUR bis 26.45 EUR
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IXFK102N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264 Drain current: 102A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Kind of package: tube Gate charge: 224nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 300V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK102N30P | Hersteller : IXYS |
MOSFETs 102 Amps 300V 0.033 Rds |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK102N30P | Hersteller : IXYS |
Description: MOSFET N-CH 300V 102A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
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