
IXFK120N30T IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
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Technische Details IXFK120N30T IXYS
Description: MOSFET N-CH 300V 120A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFK120N30T nach Preis ab 71.50 EUR bis 71.50 EUR
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IXFK120N30T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264 Drain current: 120A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhancement Mounting: THT Case: TO264 Drain-source voltage: 300V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK120N30T Produktcode: 124250
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IXFK120N30T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 300V 120A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK120N30T | Hersteller : IXYS |
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Produkt ist nicht verfügbar |