Technische Details IXFK120N65X2 Littelfuse
Description: MOSFET N-CH 650V 120A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.
Weitere Produktangebote IXFK120N65X2
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IXFK120N65X2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 220ns Anzahl je Verpackung: 1 Stücke |
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IXFK120N65X2 | Hersteller : IXYS |
Description: MOSFET N-CH 650V 120A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK120N65X2 | Hersteller : IXYS |
MOSFETs MOSFET 650V/120A Ultra Junction X2 |
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IXFK120N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 220ns |
Produkt ist nicht verfügbar |