auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 21.05 EUR |
| 25+ | 19.36 EUR |
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Technische Details IXFK170N20T Littelfuse
Description: MOSFET N-CH 200V 170A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V, Power Dissipation (Max): 1150W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V.
Weitere Produktangebote IXFK170N20T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFK170N20T | Hersteller : Littelfuse |
 Trans MOSFET N-CH 200V 170A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK170N20T | Hersteller : IXYS |
Description: MOSFET N-CH 200V 170A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Power Dissipation (Max): 1150W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK170N20T | Hersteller : IXYS |
MOSFETs 170A 200V |
Produkt ist nicht verfügbar |
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IXFK170N20T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 170A Power dissipation: 1.15kW Case: TO264 On-state resistance: 11mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |