Technische Details IXFK26N100P Littelfuse
Description: MOSFET N-CH 1000V 26A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.
Weitere Produktangebote IXFK26N100P
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IXFK26N100P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns Case: TO264 Mounting: THT Reverse recovery time: 300ns On-state resistance: 390mΩ Drain current: 26A Gate-source voltage: ±30V Power dissipation: 780W Drain-source voltage: 1kV Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 197nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK26N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 26A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK26N100P | Hersteller : IXYS |
MOSFETs 26 Amps 1000V |
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IXFK26N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns Case: TO264 Mounting: THT Reverse recovery time: 300ns On-state resistance: 390mΩ Drain current: 26A Gate-source voltage: ±30V Power dissipation: 780W Drain-source voltage: 1kV Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 197nC |
Produkt ist nicht verfügbar |