IXFK26N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Technische Details IXFK26N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 780W (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Weitere Produktangebote IXFK26N100P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXFK26N100P | IXYS |
MOSFETs 26 Amps 1000V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFK26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 26A Power dissipation: 780W Case: TO264 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns Gate charge: 197nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK26N100P |
|
Hersteller: IXYS
MOSFETs 26 Amps 1000V
MOSFETs 26 Amps 1000V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK26N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH