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IXFK26N100P

IXFK26N100P IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
2+37.61 EUR
3+37.59 EUR
25+36.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFK26N100P IXYS

Description: MOSFET N-CH 1000V 26A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.

Weitere Produktangebote IXFK26N100P nach Preis ab 71.5 EUR bis 71.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFK26N100P IXFK26N100P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED0210783C38BF&compId=IXFK26N100P_IXFX26N100P.pdf?ci_sign=e3bbcbcc0f83667d3f1a627314a9d5c5be08eed7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFK26N100P IXFK26N100P Hersteller : Littelfuse te_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-264
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IXFK26N100P IXFK26N100P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 26A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFK26N100P IXFK26N100P Hersteller : IXYS media-3320810.pdf MOSFETs 26 Amps 1000V
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