
IXFK26N100P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
2+ | 37.61 EUR |
3+ | 37.59 EUR |
25+ | 36.95 EUR |
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Technische Details IXFK26N100P IXYS
Description: MOSFET N-CH 1000V 26A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.
Weitere Produktangebote IXFK26N100P nach Preis ab 71.5 EUR bis 71.5 EUR
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IXFK26N100P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns Mounting: THT Type of transistor: N-MOSFET Power dissipation: 780W Polarisation: unipolar Kind of package: tube Gate charge: 197nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Case: TO264 Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 26A On-state resistance: 390mΩ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK26N100P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK26N100P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK26N100P | Hersteller : IXYS |
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Produkt ist nicht verfügbar |