
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 36.96 EUR |
10+ | 30.85 EUR |
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Technische Details IXFK32N100P IXYS
Description: MOSFET N-CH 1000V 32A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V.
Weitere Produktangebote IXFK32N100P nach Preis ab 23.76 EUR bis 37.21 EUR
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IXFK32N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 32A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK32N100P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK32N100P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK32N100P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK32N100P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |