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Technische Details IXFK32N100Q3 IXYS
Description: MOSFET N-CH 1000V 32A TO264AA, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote IXFK32N100Q3 nach Preis ab 65.39 EUR bis 98.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFK32N100Q3 | IXYS |
 Description: MOSFET N-CH 1000V 32A TO264AASupplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 6.5V @ 8mA Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFK32N100Q3 |
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Hersteller: IXYS
Description: MOSFET N-CH 1000V 32A TO264AA
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 1000V 32A TO264AA
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 98.06 EUR |
| 25+ | 67.87 EUR |
| 50+ | 65.39 EUR |