IXFK32N80Q3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Drain-source voltage: 800V
Drain current: 32A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Mounting: THT
Case: TO264
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 26.68 EUR |
| 25+ | 26.21 EUR |
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Technische Details IXFK32N80Q3 IXYS
Description: MOSFET N-CH 800V 32A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 25 V.
Weitere Produktangebote IXFK32N80Q3 nach Preis ab 26.68 EUR bis 26.68 EUR
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IXFK32N80Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264 Drain-source voltage: 800V Drain current: 32A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 1kW Polarisation: unipolar Kind of package: tube Gate charge: 0.14µC Kind of channel: enhancement Mounting: THT Case: TO264 |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK32N80Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 800V 32A 3-Pin(3+Tab) TO-264 |
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IXFK32N80Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 800V 32A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 25 V |
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IXFK32N80Q3 | Hersteller : IXYS |
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