IXFK50N85X IXYS

Description: MOSFET N-CH 850V 50A TO264, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264AA, Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.