IXFK52N100X Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 52A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 53.17 EUR |
| 25+ | 35.67 EUR |
| 100+ | 34.65 EUR |
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Technische Details IXFK52N100X Littelfuse Inc.
Description: MOSFET N-CH 1000V 52A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: TO-264, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns Anzahl je Verpackung: 1 Stücke |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns |
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