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IXFK52N100X

IXFK52N100X Littelfuse Inc.


littelfuse-discrete-mosfets-n-channel-ultra-junction-ixf-52n100x-datasheet?assetguid=5AC6E45C-FFEB-4426-8A2B-51C0F09790B7 Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 52A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
auf Bestellung 263 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.17 EUR
25+35.67 EUR
100+34.65 EUR
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Technische Details IXFK52N100X Littelfuse Inc.

Description: MOSFET N-CH 1000V 52A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: TO-264, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.

Weitere Produktangebote IXFK52N100X

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IXFK52N100X IXFK52N100X Hersteller : IXYS ixys_s_a0006610715_1-2272729.pdf MOSFET 52A 1000V POWER MOSFET
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IXFK52N100X IXFK52N100X Hersteller : Littelfuse sfets_n-channel_ultra_junction_ixf_52n100x_datasheet.pdf.pdf Power MOSFET
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IXFK52N100X IXFK52N100X Hersteller : Littelfuse media.pdf Power MOSFET
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IXFK52N100X IXFK52N100X Hersteller : IXYS IXFK(X)52N100X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Anzahl je Verpackung: 1 Stücke
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IXFK52N100X IXFK52N100X Hersteller : IXYS IXFK(X)52N100X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH