IXFK52N100X Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 52A TO264
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 1250W (Tc)
| Anzahl | Preis |
|---|---|
| 1+ | 53.17 EUR |
| 25+ | 35.67 EUR |
| 100+ | 34.65 EUR |
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Technische Details IXFK52N100X Littelfuse Inc.
Description: MOSFET N-CH 1000V 52A TO264, Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 1250W (Tc).
Weitere Produktangebote IXFK52N100X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXFK52N100X | Hersteller : Littelfuse |
MOSFET N-CH 1000V 52A TO264 Транзистори |
Produkt ist nicht verfügbar |
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IXFK52N100X | Hersteller : IXYS |
MOSFETs 52A 1000V POWER MOSFET |
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