| Anzahl | Preis |
|---|---|
| 1+ | 41.87 EUR |
| 10+ | 38.61 EUR |
| 25+ | 36.85 EUR |
| 100+ | 32.96 EUR |
| 500+ | 29.67 EUR |
| 1000+ | 28.64 EUR |
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Technische Details IXFK60N55Q2 IXYS
Description: MOSFET N-CH 550V 60A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 735W (Tc), Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Weitere Produktangebote IXFK60N55Q2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFK60N55Q2 | Hersteller : IXYS |
 Description: MOSFET N-CH 550V 60A TO264AAInput Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
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