IXFK64N60P3 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 145nC
| Anzahl | Privatkunde |
|---|---|
| 4+ | 24.29 EUR |
| 5+ | 21.03 EUR |
| 10+ | 19.19 EUR |
| 25+ | 17.15 EUR |
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Technische Details IXFK64N60P3 IXYS
Description: MOSFET N-CH 600V 64A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V, Power Dissipation (Max): 1130W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V.
Weitere Produktangebote IXFK64N60P3 nach Preis ab 22.02 EUR bis 39.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFK64N60P3 | IXYS |
MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET |
auf Bestellung 1629 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK64N60P3 | IXYS |
Description: MOSFET N-CH 600V 64A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V Power Dissipation (Max): 1130W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFK64N60P3 |
|
Hersteller: IXYS
MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET
MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET
auf Bestellung 1629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.79 EUR |
| 10+ | 24.91 EUR |
| 100+ | 23.86 EUR |
| IXFK64N60P3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.54 EUR |
| 25+ | 25.37 EUR |
| 100+ | 22.02 EUR |