IXFL210N30P3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
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Technische Details IXFL210N30P3 IXYS
Description: MOSFET N-CH 300V 108A ISOPLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V.
Weitere Produktangebote IXFL210N30P3 nach Preis ab 71.5 EUR bis 71.5 EUR
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IXFL210N30P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 16mΩ Mounting: THT Gate charge: 268nC Kind of channel: enhancement Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFL210N30P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 108A 3-Pin(3+Tab) ISOPLUS 264 |
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IXFL210N30P3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 108A ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFL210N30P3 | Hersteller : IXYS |
MOSFETs N-Channel: Power MOSFET w/Fast Diode |
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