auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 87.23 EUR |
2+ | 62.28 EUR |
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Technische Details IXFL32N120P IXYS
Description: MOSFET N-CH 1200V 24A I5PAK, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: ISOPLUSi5-Pak™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V.
Weitere Produktangebote IXFL32N120P
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFL32N120P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFL32N120P | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUSi5-Pak™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFL32N120P | Hersteller : IXYS |
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Produkt ist nicht verfügbar |