IXFL32N120P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 29.86 EUR |
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Technische Details IXFL32N120P IXYS
Description: MOSFET N-CH 1200V 24A I5PAK, Packaging: Tube, Package / Case: ISOPLUSi5-Pak™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: ISOPLUSi5-Pak™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V.
Weitere Produktangebote IXFL32N120P nach Preis ab 29.86 EUR bis 29.86 EUR
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IXFL32N120P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Power dissipation: 520W Case: ISOPLUS i5-pac™ On-state resistance: 0.34Ω Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFL32N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 1.2KV 24A 3-Pin(3+Tab) ISOPLUS I5-PAK |
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IXFL32N120P | Hersteller : IXYS |
Description: MOSFET N-CH 1200V 24A I5PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUSi5-Pak™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFL32N120P | Hersteller : IXYS |
MOSFET 32 Amps 1200V |
Produkt ist nicht verfügbar |