IXFN100N50Q3 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
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Technische Details IXFN100N50Q3 IXYS
Description: MOSFET N-CH 500V 82A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V.
Weitere Produktangebote IXFN100N50Q3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFN100N50Q3 | IXYS |
 Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 500V/82A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN100N50Q3 | IXYS |
Category: Transistor drivers Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Electrical mounting: screw On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Gate-source voltage: ±40V Mechanical mounting: screw Polarisation: unipolar Gate charge: 255nC Reverse recovery time: 250ns Kind of channel: enhancement Case: SOT227B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN100N50Q3 |
|
Hersteller: IXYS
Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 500V/82A
Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 500V/82A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN100N50Q3 |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Electrical mounting: screw
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Polarisation: unipolar
Gate charge: 255nC
Reverse recovery time: 250ns
Kind of channel: enhancement
Case: SOT227B
Category: Transistor drivers
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Electrical mounting: screw
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Polarisation: unipolar
Gate charge: 255nC
Reverse recovery time: 250ns
Kind of channel: enhancement
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH