auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 48.45 EUR |
| 10+ | 39.6 EUR |
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Technische Details IXFN100N65X2 IXYS
Description: MOSFET N-CH 650V 78A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.
Weitere Produktangebote IXFN100N65X2 nach Preis ab 36.5 EUR bis 51.55 EUR
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IXFN100N65X2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 650V 78A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN100N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 78A 4-Pin SOT-227B |
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IXFN100N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Pulsed drain current: 200A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 30mΩ Gate charge: 183nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |