IXFN110N60P3 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 60.72 EUR |
| 10+ | 47.7 EUR |
| 100+ | 43.67 EUR |
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Technische Details IXFN110N60P3 IXYS
Description: MOSFET N-CH 600V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V, Power Dissipation (Max): 1500W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFN110N60P3 nach Preis ab 53.08 EUR bis 69.89 EUR
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IXFN110N60P3 | Hersteller : IXYS |
MOSFET Modules 600V 90A 0.056Ohm PolarP3 Power MOSFET |
auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN110N60P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 90A 4-Pin SOT-227B |
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IXFN110N60P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 90A 4-Pin SOT-227B |
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IXFN110N60P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Gate charge: 254nC Reverse recovery time: 250ns Pulsed drain current: 275A |
Produkt ist nicht verfügbar |