IXFN110N60P3 Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Description: MOSFET N-CH 600V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 63.25 EUR |
| 10+ | 48.91 EUR |
| 100+ | 44.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN110N60P3 Littelfuse Inc.
Description: MOSFET N-CH 600V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V, Power Dissipation (Max): 1500W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFN110N60P3 nach Preis ab 52.92 EUR bis 67.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFN110N60P3 | Hersteller : IXYS |
 MOSFET Modules 600V 90A 0.056Ohm PolarP3 Power MOSFET |
auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
IXFN110N60P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 90A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||
 |
IXFN110N60P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 90A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||
 |
IXFN110N60P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Pulsed drain current: 275A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar3™ Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
IXFN110N60P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Pulsed drain current: 275A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar3™ Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw |
Produkt ist nicht verfügbar |