IXFN110N85X IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Kind of channel: enhanced
Gate charge: 425nC
Reverse recovery time: 205ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 92.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN110N85X IXYS
Description: MOSFET N-CH 850V 110A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V, Power Dissipation (Max): 1170W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V.
Weitere Produktangebote IXFN110N85X nach Preis ab 92.54 EUR bis 175.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXFN110N85X | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 110A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 220A Power dissipation: 1170W Technology: HiPerFET™; X-Class Kind of channel: enhanced Gate charge: 425nC Reverse recovery time: 205ns Gate-source voltage: ±40V Mechanical mounting: screw |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IXFN110N85X | Hersteller : IXYS |
Discrete Semiconductor Modules 850V X-Class HiPerFE Power MOSFET |
auf Bestellung 171 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||
 |
IXFN110N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 110A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFN110N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 110A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFN110N85X | Hersteller : IXYS |
Description: MOSFET N-CH 850V 110A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V Power Dissipation (Max): 1170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V |
Produkt ist nicht verfügbar |