IXFN132N50P3 IXYS
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 250nC
On-state resistance: 39mΩ
Technology: HiPerFET™; Polar™
Drain current: 112A
Pulsed drain current: 330A
Drain-source voltage: 500V
Power dissipation: 1.5kW
| Anzahl | Preis |
|---|---|
| 2+ | 49.34 EUR |
| 5+ | 46.3 EUR |
| 10+ | 45.59 EUR |
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Technische Details IXFN132N50P3 IXYS
Description: MOSFET N-CH 500V 112A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 112A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V, Power Dissipation (Max): 1500W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.
Weitere Produktangebote IXFN132N50P3 nach Preis ab 49.79 EUR bis 75.68 EUR
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IXFN132N50P3 | Hersteller : IXYS |
MOSFET Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET |
auf Bestellung 155 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN132N50P3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 112A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
auf Bestellung 1856 Stücke: Lieferzeit 10-14 Tag (e) |
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