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IXFN150N65X2

IXFN150N65X2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C8B86E1D378BF&compId=IXFN150N65X2.pdf?ci_sign=b8e5f0c766f20f8a34422d633165129f8ae5bd95 Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 190ns
Gate charge: 355nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+62.83 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFN150N65X2 IXYS

Description: MOSFET N-CH 650V 145A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V.

Weitere Produktangebote IXFN150N65X2 nach Preis ab 62.83 EUR bis 85.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN150N65X2 IXFN150N65X2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C8B86E1D378BF&compId=IXFN150N65X2.pdf?ci_sign=b8e5f0c766f20f8a34422d633165129f8ae5bd95 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 190ns
Gate charge: 355nC
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+62.83 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN150N65X2 IXFN150N65X2 Hersteller : Littelfuse Inc. Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 650V 145A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.12 EUR
10+63.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN150N65X2 IXFN150N65X2 Hersteller : IXYS media-3320042.pdf MOSFET Modules 650V/145A Ultra Junction X2-Class
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.52 EUR
10+77.76 EUR
100+70.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN150N65X2 IXFN150N65X2 Hersteller : Littelfuse fets_n-channel_ultra_junction_ixfn150n65x2_datasheet.pdf.pdf Trans MOSFET N-CH 650V 145A 4-Pin SOT-227B
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