IXFN170N25X3 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 250V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 41.08 EUR |
| 10+ | 37.45 EUR |
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Technische Details IXFN170N25X3 Littelfuse Inc.
Description: MOSFET N-CH 250V 170A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.
Weitere Produktangebote IXFN170N25X3 nach Preis ab 41.85 EUR bis 44.95 EUR
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IXFN170N25X3 | Hersteller : IXYS |
MOSFET Modules 250V/170A Ultra Junc tion X3-Class MOSFE |
auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN170N25X3 | Hersteller : Littelfuse |
Power MOSFET |
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IXFN170N25X3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Pulsed drain current: 400A Drain current: 146A Drain-source voltage: 250V Gate charge: 0.19µC Reverse recovery time: 135ns On-state resistance: 7.4mΩ Power dissipation: 390W Gate-source voltage: ±30V Technology: HiPerFET™; X3-Class Kind of channel: enhancement Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |