| Anzahl | Preis |
|---|---|
| 1+ | 76.67 EUR |
| 10+ | 68.32 EUR |
| 20+ | 66.05 EUR |
| 50+ | 64.86 EUR |
| 100+ | 59.96 EUR |
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Technische Details IXFN170N30P IXYS
Description: MOSFET N-CH 300V 138A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V, Current - Continuous Drain (Id) @ 25°C: 138A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXFN170N30P nach Preis ab 60.37 EUR bis 77.19 EUR
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IXFN170N30P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 300V 138A SOT-227BInput Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Current - Continuous Drain (Id) @ 25°C: 138A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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