auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 76.67 EUR |
| 10+ | 68.32 EUR |
| 20+ | 66.05 EUR |
| 50+ | 64.86 EUR |
| 100+ | 59.96 EUR |
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Technische Details IXFN170N30P IXYS
Description: MOSFET N-CH 300V 138A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 138A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFN170N30P nach Preis ab 60.37 EUR bis 77.19 EUR
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IXFN170N30P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 300V 138A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 138A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN170N30P | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 138A 4-Pin SOT-227B |
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IXFN170N30P | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 138A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN170N30P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Pulsed drain current: 500A Drain current: 138A Drain-source voltage: 300V Gate charge: 258nC Reverse recovery time: 200ns On-state resistance: 18mΩ Power dissipation: 890W Gate-source voltage: ±30V Technology: HiPerFET™; Polar™ Kind of channel: enhancement Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |