auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 80.75 EUR |
| 10+ | 77.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN170N65X2 IXYS
Description: MOSFET N-CH 650V 170A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V, Power Dissipation (Max): 1170W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V.
Weitere Produktangebote IXFN170N65X2 nach Preis ab 64.03 EUR bis 82.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFN170N65X2 | Hersteller : IXYS |
 Description: MOSFET N-CH 650V 170A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V Power Dissipation (Max): 1170W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V |
auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXFN170N65X2 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXFN170N65X2 - MOSFET, N-CH, 650V, 170A, SOT-227 tariffCode: 0 Transistormontage: Module Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.17kW Bauform - Transistor: SOT-227 Anzahl der Pins: 4Pin(s) Produktpalette: HiPERFET X2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm directShipCharge: 25 |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
 |
IXFN170N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 170A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFN170N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 170A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFN170N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 170A Pulsed drain current: 340A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 13mΩ Gate charge: 434nC Kind of channel: enhancement Reverse recovery time: 270ns Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
IXFN170N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 170A Pulsed drain current: 340A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 13mΩ Gate charge: 434nC Kind of channel: enhancement Reverse recovery time: 270ns Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |