IXFN180N10 IXYS

Description: MOSFET N-CH 100V 180A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.