IXFN180N25T IXYS
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 364nC
On-state resistance: 12.9mΩ
Technology: GigaMOS™
Drain current: 168A
Pulsed drain current: 500A
Drain-source voltage: 250V
Power dissipation: 900W
Type of semiconductor module: MOSFET transistor
| Anzahl | Preis |
|---|---|
| 3+ | 30.67 EUR |
| 5+ | 26.44 EUR |
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Technische Details IXFN180N25T IXYS
Description: MOSFET N-CH 250V 168A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 168A (Tc), Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V, Power Dissipation (Max): 900W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Weitere Produktangebote IXFN180N25T nach Preis ab 32.66 EUR bis 52.87 EUR
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IXFN180N25T | Hersteller : IXYS |
MOSFET Modules 155A 250V |
auf Bestellung 318 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN180N25T | Hersteller : IXYS |
Description: MOSFET N-CH 250V 168A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 900W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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