IXFN20N120P IXYS
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
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Technische Details IXFN20N120P IXYS
Description: MOSFET N-CH 1200V 20A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote IXFN20N120P nach Preis ab 38.47 EUR bis 42.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IXFN20N120P | Ixys Corporation |
Trans MOSFET N-CH 1.2KV 20A 4-Pin SOT-227B |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFN20N120P |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 1.2KV 20A 4-Pin SOT-227B
Trans MOSFET N-CH 1.2KV 20A 4-Pin SOT-227B
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 42.03 EUR |
| 10+ | 38.47 EUR |