IXFN20N120P IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 19.00 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN20N120P IXYS
Description: MOSFET N-CH 1200V 20A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote IXFN20N120P nach Preis ab 19.00 EUR bis 19.00 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
IXFN20N120P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 20A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 570mΩ Pulsed drain current: 50A Power dissipation: 595W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 193nC Kind of channel: enhancement |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
IXFN20N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 20A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||
 |
IXFN20N120P | Hersteller : IXYS |
Description: MOSFET N-CH 1200V 20A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||
 |
IXFN20N120P | Hersteller : IXYS |
MOSFET Modules 20 Amps 1200V 0.6 Rds |
Produkt ist nicht verfügbar |