IXFN210N20P IXYS
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Pulsed drain current: 600A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 10.5mΩ
Kind of channel: enhancement
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate charge: 255nC
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
| Anzahl | Preis |
|---|---|
| 2+ | 46.93 EUR |
| 10+ | 42.99 EUR |
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Technische Details IXFN210N20P IXYS
Description: MOSFET N-CH 200V 188A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 188A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V, Power Dissipation (Max): 1070W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.
Weitere Produktangebote IXFN210N20P nach Preis ab 54 EUR bis 81.36 EUR
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IXFN210N20P | Hersteller : IXYS |
MOSFET Modules 188 Amps 200V 0.0105 Rds |
auf Bestellung 208 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN210N20P | Hersteller : IXYS |
Description: MOSFET N-CH 200V 188A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 188A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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