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IXFN210N20P IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFN210N20P_Datasheet.PDF
Hersteller: IXYS
MOSFET Modules 188 Amps 200V 0.0105 Rds
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+83.3 EUR
10+64.26 EUR
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Technische Details IXFN210N20P IXYS

Description: MOSFET N-CH 200V 188A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 188A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V, Power Dissipation (Max): 1070W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.

Weitere Produktangebote IXFN210N20P nach Preis ab 66.29 EUR bis 96.82 EUR

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IXFN210N20P IXFN210N20P IXYS DS100019AIXFN210N20P.pdf Description: MOSFET N-CH 200V 188A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
1+96.82 EUR
10+73.35 EUR
100+66.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN210N20P DS100019AIXFN210N20P.pdf
Hersteller: IXYS
Description: MOSFET N-CH 200V 188A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 188A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+96.82 EUR
10+73.35 EUR
100+66.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH