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Technische Details IXFN230N20T IXYS
Description: MOSFET N-CH 200V 220A SOT227B, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 1090W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V.
Weitere Produktangebote IXFN230N20T nach Preis ab 38.21 EUR bis 57.24 EUR
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IXFN230N20T | Hersteller : IXYS |
 Description: MOSFET N-CH 200V 220A SOT227BVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 1090W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Drain to Source Voltage (Vdss): 200 V |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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