IXFN240N15T2 IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN240N15T2 IXYS
Description: MOSFET N-CH 150V 240A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V.
Weitere Produktangebote IXFN240N15T2 nach Preis ab 71.5 EUR bis 71.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
IXFN240N15T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 240A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 600A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 140ns Gate charge: 460nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
IXFN240N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 240A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||
 |
IXFN240N15T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 150V 240A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||
 |
IXFN240N15T2 | Hersteller : IXYS |
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET |
Produkt ist nicht verfügbar |