IXFN26N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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Technische Details IXFN26N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 23A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.
Weitere Produktangebote IXFN26N100P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFN26N100P | IXYS |
Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN26N100P | IXYS |
Category: Transistor drivers Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±40V Reverse recovery time: 300ns Gate charge: 197nC On-state resistance: 390mΩ Technology: HiPerFET™; Polar™ Drain current: 23A Pulsed drain current: 65A Drain-source voltage: 1kV Power dissipation: 595W Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN26N100P |
|
Hersteller: IXYS
Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds
Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFN26N100P |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 197nC
On-state resistance: 390mΩ
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 65A
Drain-source voltage: 1kV
Power dissipation: 595W
Type of semiconductor module: MOSFET transistor
Category: Transistor drivers
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 197nC
On-state resistance: 390mΩ
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 65A
Drain-source voltage: 1kV
Power dissipation: 595W
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH