IXFN26N100P IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 38.08 EUR |
| 3+ | 38.07 EUR |
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Technische Details IXFN26N100P IXYS
Description: MOSFET N-CH 1000V 23A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.
Weitere Produktangebote IXFN26N100P nach Preis ab 38.07 EUR bis 38.08 EUR
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IXFN26N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 23A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 390mΩ Pulsed drain current: 65A Power dissipation: 595W Technology: HiPerFET™; Polar™ Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 300ns Gate charge: 197nC Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN26N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 23A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN26N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 23A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN26N100P | Hersteller : IXYS |
Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds |
Produkt ist nicht verfügbar |