IXFN26N120P IXYS

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A, Case: SOT227B, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: single transistor, Polarisation: unipolar, Kind of channel: enhancement, Gate-source voltage: ±40V, Reverse recovery time: 300ns, Gate charge: 255nC, On-state resistance: 0.5Ω, Technology: HiPerFET™; Polar™, Drain current: 23A, Pulsed drain current: 60A, Drain-source voltage: 1.2kV, Power dissipation: 695W, Type of semiconductor module: MOSFET transistor.