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Technische Details IXFN26N120P IXYS
Category: Transistor drivers, Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A, Case: SOT227B, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: single transistor, Polarisation: unipolar, Kind of channel: enhancement, Gate-source voltage: ±40V, Reverse recovery time: 300ns, Gate charge: 255nC, On-state resistance: 0.5Ω, Technology: HiPerFET™; Polar™, Drain current: 23A, Pulsed drain current: 60A, Drain-source voltage: 1.2kV, Power dissipation: 695W, Type of semiconductor module: MOSFET transistor.
Weitere Produktangebote IXFN26N120P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFN26N120P | IXYS |
 Discrete Semiconductor Modules 26 Amps 1200V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN26N120P | IXYS |
Category: Transistor drivers Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±40V Reverse recovery time: 300ns Gate charge: 255nC On-state resistance: 0.5Ω Technology: HiPerFET™; Polar™ Drain current: 23A Pulsed drain current: 60A Drain-source voltage: 1.2kV Power dissipation: 695W Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN26N120P |
|
Hersteller: IXYS
Discrete Semiconductor Modules 26 Amps 1200V
Discrete Semiconductor Modules 26 Amps 1200V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFN26N120P |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 255nC
On-state resistance: 0.5Ω
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Power dissipation: 695W
Type of semiconductor module: MOSFET transistor
Category: Transistor drivers
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 255nC
On-state resistance: 0.5Ω
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Power dissipation: 695W
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH