Produkte > IXYS > IXFN26N120P
IXFN26N120P

IXFN26N120P IXYS

pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+39.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFN26N120P IXYS

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 23A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 0.5Ω, Pulsed drain current: 60A, Power dissipation: 695W, Technology: HiPerFET™; Polar™, Gate-source voltage: ±40V, Mechanical mounting: screw, Reverse recovery time: 300ns, Gate charge: 255nC, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote IXFN26N120P nach Preis ab 39.27 EUR bis 39.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN26N120P IXFN26N120P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA83340B11AD820&compId=IXFN26N120P.pdf?ci_sign=5573ca8e5e9174590dcdfe9d77701095038e467c Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 255nC
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFN26N120P IXFN26N120P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 23A SOT-227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN26N120P IXFN26N120P Hersteller : IXYS media-3323867.pdf Discrete Semiconductor Modules 26 Amps 1200V
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Im Einkaufswagen  Stück im Wert von  UAH