IXFN26N120P IXYS

Category: Transistor modules, Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 23A, Power dissipation: 695W, Case: SOT227B, Gate-source voltage: ±40V, On-state resistance: 0.5Ω, Kind of channel: enhancement, Reverse recovery time: 300ns, Pulsed drain current: 60A, Type of semiconductor module: MOSFET transistor, Gate charge: 255nC, Technology: HiPerFET™; Polar™, Mechanical mounting: screw, Electrical mounting: screw, Semiconductor structure: single transistor.