IXFN26N120P IXYS

Category: Transistor modules, Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 23A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 0.5Ω, Pulsed drain current: 60A, Power dissipation: 695W, Technology: HiPerFET™; Polar™, Gate-source voltage: ±40V, Mechanical mounting: screw, Kind of channel: enhancement, Reverse recovery time: 300ns, Gate charge: 255nC.