auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 64.54 EUR |
| 10+ | 58.85 EUR |
| 100+ | 58.64 EUR |
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Technische Details IXFN300N20X3 IXYS
Description: MOSFET N-CH 200V 300A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V, Power Dissipation (Max): 695W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V.
Weitere Produktangebote IXFN300N20X3 nach Preis ab 48.75 EUR bis 69.73 EUR
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IXFN300N20X3 | Hersteller : IXYS |
 Description: MOSFET N-CH 200V 300A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN300N20X3 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXFN300N20X3 - MOSFET-Transistor, n-Kanal, 300 A, 200 V, 0.0035 ohm, 10 V, 4.5 V tariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 695W Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 695W Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0035ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN300N20X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 300A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN300N20X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 300A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN300N20X3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A Case: SOT227B Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain-source voltage: 200V Gate-source voltage: ±30V Type of semiconductor module: MOSFET transistor Drain current: 300A Pulsed drain current: 700A Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 172ns On-state resistance: 3.5mΩ Power dissipation: 695W Electrical mounting: screw |
Produkt ist nicht verfügbar |