auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 57.15 EUR |
| 10+ | 47.33 EUR |
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Technische Details IXFN32N100P IXYS
Description: MOSFET N-CH 1000V 27A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V.
Weitere Produktangebote IXFN32N100P nach Preis ab 38.97 EUR bis 58.41 EUR
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IXFN32N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 27A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V |
auf Bestellung 623 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN32N100P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
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IXFN32N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN32N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 27A Pulsed drain current: 75A Power dissipation: 690W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 225nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN32N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 27A Pulsed drain current: 75A Power dissipation: 690W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 225nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |