auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 102.22 EUR |
| 10+ | 87.7 EUR |
| 25+ | 83.62 EUR |
| 50+ | 78.91 EUR |
| 100+ | 67.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN32N120P Littelfuse
Description: MOSFET N-CH 1200V 32A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V.
Weitere Produktangebote IXFN32N120P nach Preis ab 67.94 EUR bis 109.91 EUR
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IXFN32N120P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1.2KV 32A 4-Pin SOT-227B |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN32N120P | Hersteller : IXYS |
MOSFET Modules 32 Amps 1200V |
auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN32N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 32A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN32N120P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.31Ω Gate charge: 360nC Kind of channel: enhancement Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 300ns Technology: HiPerFET™; Polar™ Semiconductor structure: single transistor Pulsed drain current: 100A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN32N120P | Hersteller : IXYS |
Description: MOSFET N-CH 1200V 32A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN32N120P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.31Ω Gate charge: 360nC Kind of channel: enhancement Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 300ns Technology: HiPerFET™; Polar™ Semiconductor structure: single transistor Pulsed drain current: 100A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |