auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 88.26 EUR |
| 10+ | 72.92 EUR |
| 100+ | 64.91 EUR |
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Technische Details IXFN340N07 IXYS
Description: MOSFET N-CH 70V 340A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 490 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V.
Weitere Produktangebote IXFN340N07
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXFN 340N07 |
auf Bestellung 5400 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFN340N07 | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 70V 340A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN340N07 | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 70V 340A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN340N07 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 70V 340A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 490 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN340N07 | Hersteller : IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA Polarisation: unipolar Drain-source voltage: 70V Drain current: 340A Pulsed drain current: 1.36kA Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 4mΩ Gate charge: 0.49µC Kind of channel: enhancement Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 200ns Technology: HiPerFET™ Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |



