IXFN36N100 IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 88.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN36N100 IXYS
Description: MOSFET N-CH 1KV 36A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V.
Weitere Produktangebote IXFN36N100 nach Preis ab 88.73 EUR bis 88.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
IXFN36N100 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 36A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.24Ω Pulsed drain current: 144A Power dissipation: 694W Technology: HiPerFET™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 180ns Gate charge: 380nC Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
IXFN36N100 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 36A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||
 |
IXFN36N100 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 36A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||
 |
IXFN36N100 | Hersteller : IXYS |
Description: MOSFET N-CH 1KV 36A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||
 |
IXFN36N100 | Hersteller : IXYS |
Discrete Semiconductor Modules 1KV 36A |
Produkt ist nicht verfügbar |