auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 56.72 EUR |
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Technische Details IXFN38N100P Littelfuse
Description: MOSFET N-CH 1000V 38A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Weitere Produktangebote IXFN38N100P nach Preis ab 58.03 EUR bis 82.26 EUR
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IXFN38N100P | Hersteller : IXYS |
 MOSFET Modules 38 Amps 1000V |
auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN38N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 38A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V |
auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN38N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B |
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IXFN38N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN38N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Gate charge: 0.35µC Reverse recovery time: 300ns On-state resistance: 0.21Ω Drain current: 38A Gate-source voltage: ±40V Pulsed drain current: 120A Power dissipation: 1kW Drain-source voltage: 1kV Kind of channel: enhancement Technology: HiPerFET™; Polar™ Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN38N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Gate charge: 0.35µC Reverse recovery time: 300ns On-state resistance: 0.21Ω Drain current: 38A Gate-source voltage: ±40V Pulsed drain current: 120A Power dissipation: 1kW Drain-source voltage: 1kV Kind of channel: enhancement Technology: HiPerFET™; Polar™ Case: SOT227B |
Produkt ist nicht verfügbar |