IXFN40N110P IXYS
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 310nC
On-state resistance: 0.26Ω
Technology: HiPerFET™; Polar™
Drain current: 34A
Pulsed drain current: 100A
Drain-source voltage: 1.1kV
Power dissipation: 890W
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Technische Details IXFN40N110P IXYS
Description: MOSFET N-CH 1100V 34A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Drain to Source Voltage (Vdss): 1100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXFN40N110P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN40N110P | IXYS |
Description: MOSFET N-CH 1100V 34A SOT-227B Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Drain to Source Voltage (Vdss): 1100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN40N110P |
|
Hersteller: IXYS
Description: MOSFET N-CH 1100V 34A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 1100V 34A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 1100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH