IXFN420N10T IXYS
auf Bestellung 92 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 79.61 EUR |
| 10+ | 70.75 EUR |
| 100+ | 61.88 EUR |
| 200+ | 57.02 EUR |
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Technische Details IXFN420N10T IXYS
Description: MOSFET N-CH 100V 420A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V, Power Dissipation (Max): 1070W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V.
Weitere Produktangebote IXFN420N10T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXFN420N10T | Hersteller : Littelfuse |
 Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN420N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN420N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN420N10T | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Pulsed drain current: 1kA Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.3mΩ Gate charge: 670nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 140ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN420N10T | Hersteller : IXYS |
Description: MOSFET N-CH 100V 420A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN420N10T | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Pulsed drain current: 1kA Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.3mΩ Gate charge: 670nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 140ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |