
IXFN44N80P IXYS

Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 200nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 37.29 EUR |
3+ | 35.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN44N80P IXYS
Description: MOSFET N-CH 800V 39A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXFN44N80P nach Preis ab 33.32 EUR bis 55.69 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXFN44N80P | Hersteller : IXYS |
![]() Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 39A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.19Ω Pulsed drain current: 100A Power dissipation: 694W Technology: HiPerFET™; Polar™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 200nC Kind of channel: enhancement |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
![]() |
IXFN44N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 39A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
IXFN44N80P | Hersteller : IXYS |
![]() |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
IXFN44N80P | Hersteller : IXYS SEMICONDUCTOR |
![]() Transistormontage: Modul Drain-Source-Spannung Vds: 800 Dauer-Drainstrom Id: 44 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 694 Bauform - Transistor: ISOTOP Anzahl der Pins: 4 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.19 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: No SVHC (12-Jan-2017) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
![]() |
IXFN44N80P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |