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IXFN44N80P

IXFN44N80P IXYS


IXFN44N80P.pdf
Hersteller: IXYS
Description: MOSFET N-CH 800V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 263 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.5 EUR
10+43.46 EUR
100+37.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFN44N80P IXYS

Description: MOSFET N-CH 800V 39A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.

Weitere Produktangebote IXFN44N80P nach Preis ab 45.28 EUR bis 59.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN44N80P IXFN44N80P Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFN44N80P_Datasheet.PDF MOSFET Modules 36 Amps 800V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.19 EUR
10+45.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH