Technische Details IXFN50N120SIC Littelfuse
Description: SICFET N-CH 1200V 47A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V.
Weitere Produktangebote IXFN50N120SIC
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| IXFN50N120SIC | Hersteller : IXYS |
 IXFN50N120SIC Transistor modules MOSFET |
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IXFN50N120SIC | Hersteller : IXYS |
Description: SICFET N-CH 1200V 47A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V |
Produkt ist nicht verfügbar |
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IXFN50N120SIC | Hersteller : IXYS |
SiC MOSFETs SiCarbide-Discrete MOSFET SOT-227B(mini |
Produkt ist nicht verfügbar |