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IXFN50N120SIC

IXFN50N120SIC Littelfuse


57274561634709ixfn50n120sic.pdf Hersteller: Littelfuse
Trans MOSFET N-CH SiC 1.2KV 47A 4-Pin SOT-227B Tube
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Technische Details IXFN50N120SIC Littelfuse

Description: SICFET N-CH 1200V 47A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V.

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IXFN50N120SIC Hersteller : IXYS media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet IXFN50N120SIC Transistor modules MOSFET
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IXFN50N120SIC IXFN50N120SIC Hersteller : IXYS media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet Description: SICFET N-CH 1200V 47A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
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IXFN50N120SIC IXFN50N120SIC Hersteller : IXYS media-3323006.pdf SiC MOSFETs SiCarbide-Discrete MOSFET SOT-227B(mini
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