IXFN50N120SK IXYS
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
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Technische Details IXFN50N120SK IXYS
Description: SICFET N-CH 1200V 48A SOT227B, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 2.8V @ 10mA, Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V.
Weitere Produktangebote IXFN50N120SK nach Preis ab 125.14 EUR bis 137.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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IXFN50N120SK | IXYS |
MOSFET Modules SiC Power MOSFET |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFN50N120SK |
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Hersteller: IXYS
MOSFET Modules SiC Power MOSFET
MOSFET Modules SiC Power MOSFET
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 137.05 EUR |
| 10+ | 125.14 EUR |