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IXFN50N120SK

IXFN50N120SK IXYS


media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+90.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFN50N120SK IXYS

Description: SICFET N-CH 1200V 48A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 2.8V @ 10mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V.

Weitere Produktangebote IXFN50N120SK nach Preis ab 90.86 EUR bis 118.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN50N120SK IXFN50N120SK Hersteller : IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+90.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN50N120SK IXFN50N120SK Hersteller : IXYS media-3320938.pdf MOSFET Modules SiC Power MOSFET
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+115.17 EUR
10+105.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN50N120SK IXFN50N120SK Hersteller : IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Description: SICFET N-CH 1200V 48A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+118.57 EUR
10+101.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN50N120SK IXFN50N120SK Hersteller : Littelfuse 81ixfn50n120sk.pdf SiC Power MOSFET
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