IXFN50N120SK IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Reverse recovery time: 54ns
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 90.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN50N120SK IXYS
Description: SICFET N-CH 1200V 48A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 2.8V @ 10mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V.
Weitere Produktangebote IXFN50N120SK nach Preis ab 90.86 EUR bis 118.57 EUR
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IXFN50N120SK | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 48A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: SiC Gate-source voltage: -5...20V Mechanical mounting: screw Reverse recovery time: 54ns Features of semiconductor devices: Kelvin terminal Gate charge: 115nC Kind of channel: enhancement |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN50N120SK | Hersteller : IXYS |
MOSFET Modules SiC Power MOSFET |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN50N120SK | Hersteller : IXYS |
Description: SICFET N-CH 1200V 48A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN50N120SK | Hersteller : Littelfuse |
SiC Power MOSFET |
Produkt ist nicht verfügbar |