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Technische Details IXFN52N100X IXYS
Description: MOSFET N-CH 1000V 44A SOT227B, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227B.
Weitere Produktangebote IXFN52N100X nach Preis ab 79 EUR bis 97.52 EUR
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IXFN52N100X | Hersteller : IXYS |
 Description: MOSFET N-CH 1000V 44A SOT227BVgs(th) (Max) @ Id: 6V @ 4mA Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B |
auf Bestellung 149 Stücke: Lieferzeit 10-14 Tag (e) |
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