auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 84.27 EUR |
| 10+ | 71.6 EUR |
| 20+ | 69.91 EUR |
| 50+ | 68.8 EUR |
| 100+ | 67.74 EUR |
| 200+ | 67.39 EUR |
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Technische Details IXFN52N100X IXYS
Description: MOSFET N-CH 1000V 44A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.
Weitere Produktangebote IXFN52N100X nach Preis ab 79 EUR bis 97.52 EUR
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IXFN52N100X | Hersteller : IXYS |
 Description: MOSFET N-CH 1000V 44A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 6V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V |
auf Bestellung 149 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN52N100X | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 44A Electrical mounting: screw On-state resistance: 0.125Ω Pulsed drain current: 100A Power dissipation: 830W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 245nC Kind of channel: enhancement Case: SOT227B Reverse recovery time: 260ns Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN52N100X | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 44A Electrical mounting: screw On-state resistance: 0.125Ω Pulsed drain current: 100A Power dissipation: 830W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 245nC Kind of channel: enhancement Case: SOT227B Reverse recovery time: 260ns Polarisation: unipolar |
Produkt ist nicht verfügbar |