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IXFN52N100X

IXFN52N100X IXYS


media-3321419.pdf Hersteller: IXYS
MOSFET Modules 1000V 44A SOT-227 Power MOSFET
auf Bestellung 261 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+84.27 EUR
10+71.60 EUR
20+69.91 EUR
50+68.80 EUR
100+67.74 EUR
200+67.39 EUR
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Technische Details IXFN52N100X IXYS

Description: MOSFET N-CH 1000V 44A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.

Weitere Produktangebote IXFN52N100X nach Preis ab 79.00 EUR bis 97.52 EUR

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Preis
IXFN52N100X IXFN52N100X Hersteller : IXYS Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100911B(IXFN52N100X).pdf Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+97.52 EUR
10+90.98 EUR
100+79.00 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN52N100X IXFN52N100X Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Electrical mounting: screw
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 245nC
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 260ns
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN52N100X IXFN52N100X Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7BFE6B4303820&compId=IXFN52N100X.pdf?ci_sign=6faa9317751d0bee219574a5021961c804a68910 Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Electrical mounting: screw
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 245nC
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 260ns
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH