| Anzahl | Privatkunde |
|---|---|
| 1+ | 121.7 EUR |
| 10+ | 101.25 EUR |
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Technische Details IXFN52N100X IXYS
Description: MOSFET N-CH 1000V 44A SOT227B, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227B.
Weitere Produktangebote IXFN52N100X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFN52N100X | IXYS |
 Description: MOSFET N-CH 1000V 44A SOT227BVgs(th) (Max) @ Id: 6V @ 4mA Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN52N100X | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Gate charge: 245nC Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN52N100X |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 44A SOT227B
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Description: MOSFET N-CH 1000V 44A SOT227B
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN52N100X |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH