IXFN52N90P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 900V 43A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details IXFN52N90P IXYS
Description: MOSFET N-CH 900V 43A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
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IXFN52N90P | Hersteller : IXYS |
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IXFN52N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Polarisation: unipolar Gate charge: 308nC Reverse recovery time: 300ns On-state resistance: 0.16Ω Drain current: 43A Pulsed drain current: 104A Gate-source voltage: ±40V Power dissipation: 890W Drain-source voltage: 900V Case: SOT227B Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
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