Technische Details IXFN52N90P Littelfuse
Description: MOSFET N-CH 900V 43A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.
Weitere Produktangebote IXFN52N90P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXFN52N90P | Hersteller : IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Polarisation: unipolar Gate charge: 308nC Reverse recovery time: 300ns On-state resistance: 0.16Ω Drain current: 43A Pulsed drain current: 104A Gate-source voltage: ±40V Power dissipation: 890W Drain-source voltage: 900V Case: SOT227B Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXFN52N90P | Hersteller : IXYS |
Description: MOSFET N-CH 900V 43A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IXFN52N90P | Hersteller : IXYS |
MOSFET Modules PolarHV HiPerFETs 500V-1.2Kv Red Rds |
Produkt ist nicht verfügbar |
|
|
|
IXFN52N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Polarisation: unipolar Gate charge: 308nC Reverse recovery time: 300ns On-state resistance: 0.16Ω Drain current: 43A Pulsed drain current: 104A Gate-source voltage: ±40V Power dissipation: 890W Drain-source voltage: 900V Case: SOT227B Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |