Technische Details IXFN60N80P
- MOSFET, N, SOT-227B
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:800V
- Cont Current Id:60A
- On State Resistance:0.14ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5V
- Case Style:ISOTOP
- Termination Type:Screw
- Junction to Case Thermal Resistance A:0.12`C/W
- Max Voltage Vds:800V
- N-channel Gate Charge:250nC
- No. of Pins:4
- Power Dissipation Pd:1040W
- Typ Capacitance Ciss:18000pF
- Max Reverse RecoveryTime, trr:250ns
- Transistor Case Style:ISOTOP
Weitere Produktangebote IXFN60N80P nach Preis ab 66.08 EUR bis 105.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN60N80P | IXYS |
  Description: MOSFET N-CH 800V 53A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN60N80P | IXYS |
MOSFET Modules DIODE Id54 BVdass800 |
auf Bestellung 597 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFN60N80P |
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Hersteller: IXYS
Description: MOSFET N-CH 800V 53A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Description: MOSFET N-CH 800V 53A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 98.94 EUR |
| 10+ | 74.84 EUR |
| 50+ | 66.08 EUR |
| IXFN60N80P |
|
Hersteller: IXYS
MOSFET Modules DIODE Id54 BVdass800
MOSFET Modules DIODE Id54 BVdass800
auf Bestellung 597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 105.58 EUR |
| 10+ | 85.54 EUR |
| 100+ | 80.53 EUR |