Technische Details IXFN60N80P
- MOSFET, N, SOT-227B
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:800V
- Cont Current Id:60A
- On State Resistance:0.14ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5V
- Case Style:ISOTOP
- Termination Type:Screw
- Junction to Case Thermal Resistance A:0.12`C/W
- Max Voltage Vds:800V
- N-channel Gate Charge:250nC
- No. of Pins:4
- Power Dissipation Pd:1040W
- Typ Capacitance Ciss:18000pF
- Max Reverse RecoveryTime, trr:250ns
- Transistor Case Style:ISOTOP
Weitere Produktangebote IXFN60N80P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXFN60N80P |
 SOT-227B, PolarHVTM HiPerFETPower MOSFET, 800V 53A Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IXFN60N80P |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFN60N80P | Hersteller : IXYS |
Description: MOSFET N-CH 800V 53A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN60N80P | Hersteller : IXYS |
MOSFET Modules DIODE Id54 BVdass800 |
Produkt ist nicht verfügbar |
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IXFN60N80P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 800V Drain current: 53A Pulsed drain current: 150A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.14Ω Gate charge: 250nC Kind of channel: enhancement Reverse recovery time: 250ns Electrical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar™ Mechanical mounting: screw |
Produkt ist nicht verfügbar |