Technische Details IXFN64N50P
- MOSFET, N, SOT-227B
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:500V
- Cont Current Id:64A
- On State Resistance:0.085ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5.5V
- Case Style:ISOTOP
- Termination Type:Screw
- Junction to Case Thermal Resistance A:0.18`C/W
- Max Voltage Vds:500V
- N-channel Gate Charge:150nC
- No. of Pins:4
- Power Dissipation Pd:700W
- Typ Capacitance Ciss:8700pF
- Max Reverse RecoveryTime, trr:200ns
- Transistor Case Style:ISOTOP
Weitere Produktangebote IXFN64N50P nach Preis ab 38.56 EUR bis 65.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFN64N50P | IXYS |
  Description: MOSFET N-CH 500V 61A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXFN64N50P | IXYS |
MOSFET Modules 500V 64A |
auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFN64N50P |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Description: MOSFET N-CH 500V 61A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 62.53 EUR |
| 10+ | 46.17 EUR |
| 100+ | 38.56 EUR |
| IXFN64N50P |
|
Hersteller: IXYS
MOSFET Modules 500V 64A
MOSFET Modules 500V 64A
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 65.14 EUR |
| 10+ | 53.95 EUR |
| 100+ | 47.75 EUR |
| 500+ | 47.12 EUR |