auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 44.51 EUR |
| 40+ | 40.26 EUR |
| 80+ | 36.79 EUR |
| 120+ | 33.87 EUR |
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Technische Details IXFN64N50P Ixys Corporation
Description: MOSFET N-CH 500V 61A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.
Weitere Produktangebote IXFN64N50P nach Preis ab 29.14 EUR bis 48.05 EUR
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IXFN64N50P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 500V 61A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN64N50P | Hersteller : IXYS |
MOSFET Modules 500V 64A |
auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN64N50P Produktcode: 122714
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Transistoren > MOSFET N-CH |
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IXFN64N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227B |
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IXFN64N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227B |
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IXFN64N50P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar™ Anzahl je Verpackung: 1 Stücke |
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IXFN64N50P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |